kbu8a thru kbu8m vishay general semiconductor document number: 88658 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for monitor, tv, printer, smps, adapter, audio equipment, and home appliances applications. mechanical data case: kbu epoxy meets ul 94v-0 flammability rating terminals: silver plated lead s, solderable per j-std-002 and jesd22-b102 e4 suffix for consumer grade polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) e4 primary characteristics i f(av) 8 a v rrm 50 v to 1000 v i fsm 300 a i r 10 a v f 1.0 v t j max. 150 c case style kbu ~ ~ ~ ~ notes: (1) recommended mounting position is to bolt down on heatsink with silicone thermal co mpound for maximum heat transfer with #6 s crew (2) units mounted in free air, no heatsink, p.c.b. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads (3) units mounted on a 3.0 x 3.0" x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate heatsink maximum ratings (t a = 25 c unless otherwise noted) parameter symbol kbu8a kbu8b kbu8d kbu8g kbu8j kbu8k kbu8m unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified output current at t c = 100 c (1)(3) t a = 40 c (2) i f(av) 8.0 6.0 a peak forward surge current single sine-wave superimposed on rated load i fsm 300 a operating junction and storage temperature range t j , t stg - 50 to + 150 c
kbu8a thru kbu8m vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88658 revision: 15-apr-08 2 notes: (1) units mounted in free air, no heatsink, p.c.b. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads (2) units mounted on a 3.0 x 3.0" x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol kbu8a kbu8b kbu8d kbu8g kbu8j kbu8k kbu8m unit maximum instantaneous forward drop per diode 8.0 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 10 1.0 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol kbu8a kbu8b kbu8d kbu8g kbu8j kbu8k kbu8m unit typical thermal resistance r ja r jc 18 (2) 3.0 (3) c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode kbu8j-e4/51 8.0 51 250 anti-static pvc tray figure 1. derating curve output rectified current 0 50 100 150 0 2 4 6 8 heatsink mo u nting, t c , 3.0 x 3.0 x 12" thk. al. plate (7.5 x 0.3 cm) p.c.b. mo u nting, t a 0.375" (9.5 mm) lead length 0.5 x 0.5" (12 x 12 mm) copper pads 60 hz resisti v e or ind u cti v e load temperat u re (c) a v erage for w ard c u rrent (a) figure 2. maximum non-repetitive peak forward surge current 1 10 100 0 50 100 150 200 250 300 t j = 150 c single sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle
kbu8a thru kbu8m vishay general semiconductor document number: 88658 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 0.1 1 10 100 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 100 0.01 0.1 1 10 100 t j = 100 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode 1 10 100 10 100 1000 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.160 (4.1) 0.065 (1.7) 0.1 8 5 (4.7) 0. 8 95 (22.7) 0.935 (23.7) 0.140 (3.6) 0.165 (4.2) 0.0 8 5(2.2) 0.240 (6.09) 0.200 (5.0 8 ) 0.220 (5.6) 0.1 8 0 (4.6) 0.075 (1.9) r typ. (2 places) 45 0.205 (5.2) 0.1 8 5 (4.7) 0.052 (1.3) 0.04 8 (1.2) 0.2 8 0 (7.1) 0.260 (6.6) dia. 0.760 (19.3) max. 0.700 (17. 8 ) 0.660 (16. 8 ) 1.0 (25.4) mi n . 0.455 (11.3) 0.405 (10.3) case style kbu
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